NTD95N02R
Power MOSFET
95 Amps, 24 Volts
N?Channel DPAK
Features
? High Power and Current Handling Capability
? Fast Switching Performance
? Low R DS(on) to Minimize Conduction Loss
? Low Gate Charge to Minimize Switching Losses
? Pb?Free Packages are Available
http://onsemi.com
V (BR)DSS R DS(ON) TYP I D MAX*
4.5 m W @ 10 V
24 V 95 A
5.9 m W @ 4.5 V
*I D MAX in the product summary table is continuous
and steady at 25 ° C.
Applications
? CPU Motherboard Vcore Applications
? High Frequency DC?DC Converters
? Motor Drives
? Bridge Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
G
D
S
Parameter
Drain?to?Source Voltage
Gate?to?Source Voltage
Symbol
V DSS
V GS
Value
24
± 20
Unit
V
V
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Thermal Resistance, Junction?to?Case
Total Power Dissipation @ T A = 25 ° C
Drain Current –
? Continuous @ T A = 25 ° C, Limited by Package
? Continuous @ T A = 25 ° C, Limited by Wires
Thermal Resistance, Junction?to? Ambient
(Note 1)
? Total Power Dissipation @ T A = 25 ° C
? Drain Current ? Continuous @ T A = 25 ° C
R q JC
P D
I D
I D
R q JA
P D
I D
1.45
86
95
32
52
2.4
15.8
° C/W
W
A
A
° C/W
W
A
1 2
3
4
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
1
Gate
Drain
2
Drain
3
Source
Thermal Resistance, Junction?to?Ambient
(Note 2)
? Total Power Dissipation @ T A = 25 ° C
? Drain Current ? Continuous @ T A = 25 ° C
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
R q JA
P D
I D
T J ,
T STG
I S
100
1.25
12
?55 to
150
45
° C/W
W
A
° C
A
4
DPAK
CASE 369D
(Straight Lead)
4
Drain
Single Pulse Drain?to?Source Avalanche
Energy – (V DD = 25 V, V G = 10, I PK = 13 A,
L = 1 mH, R G = 25 W )
E AS
84
mJ
1
2
3
STYLE 2
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 seconds)
T L
260
° C
1 2 3
Gate Drain Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
Y
WW
T95N02R
G
= Year
= Work Week
= Device Code
= Pb?Free Package
2. Surface mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
? Semiconductor Components Industries, LLC, 2006
July, 2006 ? Rev. 3
1
Publication Order Number:
NTD95N02R/D
相关PDF资料
NTDV18N06LT4G MOSFET N-CH 60V 18A DPAK
NTDV20N06T4G MOSFET N-CH 60V 20A DPAK
NTDV3055L104-1G MOSFET N-CH 60V 12A IPAK
NTDV5804NT4G MOSFET N-CH 40V 69A DPAK
NTF3055-100T3LF MOSFET N-CH 60V 3A SOT223
NTF3055-160T1 MOSFET N-CH 60V 2A SOT223
NTF3055L108T3LFG MOSFET N-CH 60V 3A SOT223
NTF3055L175T1 MOSFET N-CH 60V 2A SOT223
相关代理商/技术参数
NTD985 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-126VAR
NTD986 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 2A I(C) | TO-126VAR
NTD987 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 5A I(C) | TO-220AB
NTDP3-90PT82 制造商:ITT Interconnect Solutions 功能描述:NTDP3-90PT82 - Bulk
NTDRT21 制造商:OMRON AUTOMATION AND SAFETY 功能描述:DEVICENET COM MODULE NT31/631 制造商:Omron Electronic Components LLC 功能描述:Programmable Terminal Devicenet Interface Unit
NT-DRT21 功能描述:LCD 触摸面板 DEVICENET COM M ODULE NT31/631 RoHS:否 制造商:3M Touch Systems 类型:P-MVA 大小:22 in 绝缘电阻: 封装:Bulk
NTDV18N06LT4G 功能描述:MOSFET NFET DPAK 60V 18A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTDV20N06LT4G 功能描述:MOSFET NFET 60V 20A 48MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube